10-FY07BIA050SM-M523E38 10-py07bia050sm-m523e38y target datasheet copyright vincotech 1 19 okt. 2015 / revision 1 in. boost switch\h-bridge switch maximum ratings t j =25c, unless otherwise specified flow sol 1 bi 650 v / 50 a booster: dual boost topology ultra highspeed igbt and diode high efficiency bypass rectifier inverter: split output hbridge topology highspeed igbt and diode integrated dc capacitors temperature sensor power supply solar welding 10fy07bia050smm523e38 10py07bia050smm523e38y flow 1 12mm housing schematic features target applications types parameter symbol value unit a condition collectoremitter voltage v ces 650 v collector current i c t j = t jmax t s =80 c 43 repetitive peak collector current i crm t p limited by t jmax 150 a total power dissipation p tot t j = t jmax t s =80 c 84 w gateemitter voltage v ges 20 v maximum junction temperature t jmax 175 c
10-FY07BIA050SM-M523E38 10-py07bia050sm-m523e38y target datasheet copyright vincotech 2 19 okt. 2015 / revision 1 parameter symbol value unit maximum junction temperature t jmax 150 c a 2 s total power dissipation p tot t j = t jmax t h = 80c 60 w surge (nonrepetitive) forward current i fsm 50 hz single half sine wave 270 a surge current capability i 2 t t p = 10 ms 370 t j = 150c continuous (direct) forward current i f t j = t jmax t h = 80c 48 a conditions peak repetitive reverse voltage v rrm 1600 v in. boost inverse diode bypass diode parameter symbol value unit maximum junction temperature t jmax 175 c power dissipation p tot t j = t jmax t s =80c 62 w repetitive peak forward current i frm 90 a continuous (direct) forward current i f t j = t jmax t s =80c 33 a conditions peak repetitive reverse voltage v rrm 650 v parameter symbol value unit conditions peak repetitive reverse voltage v rrm 650 v repetitive peak forward current i frm 20 a continuous (direct) forward current i f t j = t jmax t s = 80c 17 a total power dissipation p tot t j = t jmax t s = 80c 33 w maximum junction temperature t jmax 175 c in. boost diode
10-FY07BIA050SM-M523E38 10-py07bia050sm-m523e38y target datasheet copyright vincotech 3 19 okt. 2015 / revision 1 parameter symbol value unit repetitive peak forward current t j = t jmax maximum junction temperature total power dissipation w i f peak repetitive reverse voltage continuous (direct) forward current t s = 80c 650 v a 38 t j = t jmax v rrm conditions p tot i frm t s = 80c 52 175 t jmax a 60 c parameter symbol unit thermal properties isolation properties isolation voltage v i sol dc voltage t p =2s 4000 v creepage distance min 12,7 mm clearance min 12,7 mm comparative tracking index cti >200 conditions value c c storage temperature t stg 40+125 operation junction temperature t jop 40+( t jmax 25) module properties h-bridge diode dc link capacitance parameter symbol unit conditions value c maximum dc voltage v max 630 v operation temperature t op 55+125
10-FY07BIA050SM-M523E38 10-py07bia050sm-m523e38y target datasheet copyright vincotech 4 19 okt. 2015 / revision 1 in. boost switch\h-bridge switch characteristic values in. boost diode 25 3,3 4 4,7 125 25 1 1,82 2,22 125 2,00 150 25 40 125 25 120 125 parameter symbol conditions value unit t j [ c] min typ max static v ge [v] v ce [v] i c [a] v collec toremitter saturation voltage v cesat 15 50 v gateemitter threshold voltage v ge(th) v ge = v ce 0,0005 a gateemitter leakage c urrent i ges 20 0 na collec toremitter c utoff current i ces 0 650 50 none input capacitance c ies f=1 mhz 0 25 internal gate resistance r g 50 25 120 nc reverse transfer capac itance c res 11 gate c harge q g 15 520 25 3000 pf output capacitance c oes 1,13 k/w thermal thermal resistance junc tion to sink r th(j-s) phasechange material ? =3,4w /mk 25 2,46 2,6 125 2,03 150 25 10 150 1,54 k/w thermal resistance junc tion to sink r th(j-s) phasec hange material ? =3,4w/mk thermal v reverse leakage c urrent i r 665 a forward voltage v f 30 t j [c] min typ max static i f [a] parameter symbol conditions value unit v r [v]
10-FY07BIA050SM-M523E38 10-py07bia050sm-m523e38y target datasheet copyright vincotech 5 19 okt. 2015 / revision 1 bypass diode h-bridge diode 25 1,17 1,21 125 1,1 150 25 50 150 1100 1,16 k/w thermal resistanc e junction to sink r th(j-s) phasec hange material ? =3,4w/mk thermal v reverse leakage current i r 1600 a forward voltage v f 35 t j [c] min typ max static i f [a] parameter symbol conditions value unit v r [v] 25 1,35 1,7 125 150 25 1,6 150 1,82 k/w thermal resistance junction to sink r th(j-s) min typ max phasechange material ? =3,4w/mk 30 i f [a] t j [c] v r [v] parameter symbol conditions value unit reverse leakage current static 650 v f i r thermal v a forward voltage 25 1,67 1,87 125 1,56 150 25 0,14 150 i f [a] parameter symbol conditions value unit v r [v] static t j [c] min typ max 10 v reverse leakage current i r 650 a forward voltage v f thermal thermal resistance junction to sink r th(j-s) phasechange material ? =3,4w/mk k/w 2,87 in. boost inverse diode
10-FY07BIA050SM-M523E38 10-py07bia050sm-m523e38y target datasheet copyright vincotech 6 19 okt. 2015 / revision 1 thermistor parameter symbol unit v ge [v] v ce [v] i c [a] t j [ c] min typ max b vincotech ntc reference power dissipation constant power dissipation p bvalue b (25/100) tol. 3% bvalue b (25/50) tol. 3% k 25 2 mw/k 25 3950 25 3998 k 25 22 k +14 % 200 100 12 25 mw rated resistance r deviation of r100 r/r r100=1486 conditions value dc link capacitance % +10 tolerance 10 parameter symbol conditions value unit t j [c] min typ max capacitance c nf 47
10-FY07BIA050SM-M523E38 10-py07bia050sm-m523e38y target datasheet copyright vincotech 7 19 okt. 2015 / revision 1 date code ul & vinco lot serial wwyy ul vinco lllll ssss type&ver lot number serial date code tttttttvv lllll ssss wwyy pin x y function pin x y function 1 0 28,2 g25 30 33,5 0 ph1 2 3 28,2 s25 31 41,2 0 ph2 3 6 28,2 n.c. 32 44,2 0 s14 4 12,35 28,2 n.c. 33 47,2 0 g14 5 15,35 28,2 s27 34 52,2 0 ph2 6 18,35 28,2 g27 7 22,35 28,2 n.c. 8 25,35 28,2 s11 9 28,35 28,2 g11 10 34,7 28,2 therm1 11 39,8 28,2 therm2 12 46,2 28,2 g13 13 49,2 28,2 s13 14 52,2 28,2 n.c. 15 37,25 22,85 dc 16 37,25 20,35 dc 17 9,85 15,45 dcboost 18 9,85 12,95 dcboost 19 36 11,8 dc+ 20 38,5 11,8 dc+ 21 7,25 6,35 dc+boost 22 9,75 6,35 dc+boost 23 0 0 acin1 24 5 0 sol1 25 10,5 0 sol2 26 15,5 0 acin2 27 22,5 0 ph1 28 27,5 0 g12 29 30,5 0 s12 m523e38y m523e38y m523e38y/3/ pin table [mm] in packaging barcode as without thermal paste pressfit pins with thermal paste pressfit pins ordering code & marking name nnnnnnnnnnnnnnnnnnnnnnnn outline m523e38 10fy07bia050smm523e38 version with thermal paste solder pins 10fy07bia050smm523e 38/3/ m523e38 m523e38/3/ without thermal paste solder pins text datamatrix m523e38 in datamatrix as ordering code pin table [mm] 10py07bia050smm523e38y 10py07bia050smm523e38y/3/ m523e38y nn-nnnnnnnnnnnnnn nnnnnnnn wwyy ul vinco lllll ssss
10-FY07BIA050SM-M523E38 10-py07bia050sm-m523e38y target datasheet copyright vincotech 8 19 okt. 2015 / revision 1 650v 650v voltage current function 50a in. boost switch 30a in. boost diode identification t25,t27 comment pinout 650 10a c10,c20 id d26,d28 d11,d12,d13,d14 igbt fwd component t11,t12,t13,t14 igbt d45,d47 fwd d25,d27 1600v 630v hbridge igbt fwd 650v 30a hbridge diode dc link capacitance rt ntc thermistor in. boost inverse diode 35a bypass diode 50a capacitor 650v rectifier
10-FY07BIA050SM-M523E38 10-py07bia050sm-m523e38y target datasheet copyright vincotech 9 19 okt. 2015 / revision 1 disclaimer the information, specifications, procedures, method s and recommendations herein (together information ) are presented by vincotech to reader in good faith, are believed to be accurate a nd reliable, but may well be incomplete and/or not applicable to all conditions or situations that may exist or occur. vincotech reserves the rig ht to make any changes without further notice to an y products to improve reliability, function or design. no representation, guarantee or warranty is made to reader as to the accuracy, rel iability or completeness of said information or that the application or use of any o f the same will avoid hazards, accidents, losses, d amages or injury of any kind to persons or property or that the same will not infringe thir d parties rights or give desired results. it is rea ders sole responsibility to test and determine the suitability of the information and the product for readers intended use. life support policy vincotech products are not authorised for use as cr itical components in life support devices or system s without the express written approval of vincotech. as used herein: 1. life support devices or systems are devices or systems which, (a) are intended for surgical implan t into the body, or (b) support or sustain life, or (c) whose failure to perform when properly used in accordance with instructions for u se provided in labelling can be reasonably expected to result in significant injury to the user. 2. a critical component is any component of a life support device or system whose failure to perform can be reasonably expected to cause the failure of the life support device or system, o r to affect its safety or effectiveness. packaging instruction package data package data for flow 1 packages see vincotech.com website. standard packaging quantity (spq) sample handling instruction 100 >spq standard |
